 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TP0610K New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) -60 rDS(on) (W) 6 @ VGS = -10 V VGS(th) (V) -1 to -3.0 ID (mA) -185 FEATURES D D D D D D High-Side Switching Low On-Resistance: 6 Low Threshold: -2 V (typ) Fast Swtiching Speed: 20 ns (typ) Low Input Capacitance: 20 pF (typ) Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Easily Driven Without Buffer APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply Converter Circuits D Solid State Relays TO-236 (SOT-23) G 1 Marking Code: 6Kwll 3 D 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability S 2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulse Drain Currentb TA = 25_C TA = 100_C TA = 25_C TA = 100_C ID IDM PD Symbol VDS VGS Limit -60 "20 -185 -115 -800 350 140 350 -55 to 150 Unit V mA Power Dissipationa Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range Notes a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71411 S-04279--Rev. C, 16-Jul-01 mW _C/W _C RthJA TJ, Tstg www.vishay.com 11-1 TP0610K Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS VGS(th) VGS = 0 V, ID = -10 A VDS = VGS, ID = -250 A VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "10 V VDS = 0 V, VGS = "10 V, TJ = 85_C VDS = 0 V, VGS = "5 V Zero Gate Voltage Drain Current IDSS VDS = -50 V, VGS = 0 V VDS = -50 V, VGS = 0 V, TJ = 85_C VDS = -10 V, VGS = -4.5 V VDS = -10 V, VGS = -10 V VGS = -4.5 V, ID = -25 mA Drain-Source On-Resistancea rDS(on) VGS = -10 V, ID = -500 mA VGS = -10 V, ID = -500 mA, TJ = 125_C Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -10 V, ID = -100 mA IS = -200 mA, VGS = 0 V 80 -1.4 -50 -600 10 6 9 mS V W mA -60 -1 -3.0 "10 "200 "500 "100 -25 -250 nA V mA Symbol Test Condition Min Typ Max Unit On-State Drain Currenta ID(on) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -25 V, VGS = 0 V, f = 1 MHz VDS = -30 V, VGS = -15 V, ID ^ -500 mA 1.7 0.26 0.46 23 10 5 pF nC Switchingb Turn-On Time Turn-Off Time tON tOFF VDD = -25 V, RL = 150 W ID ^ -200 mA, VGEN = -10 V RG = 10 W 20 ns 35 TPJO60 Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 71411 S-04279--Rev. C, 16-Jul-01 TP0610K New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. 1.0 Vishay Siliconix Output Characteristics 1200 VGS = 10 V 7V I D - Drain Current (mA) 8V 900 Transfer Characteristics TJ = -55_C 0.8 I D - Drain Current (A) 0.6 25_C 125_C 600 6V 0.4 5V 0.2 4V 0.0 0 1 2 3 4 5 300 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 20 40 VGS = 0 V Capacitance r DS(on) - On-Resistance ( W ) 16 VGS = 4.5 V C - Capacitance (pF) 32 Ciss 24 12 VGS = 5 V 8 VGS = 10 V 16 Coss 8 Crss 4 0 0 200 400 600 800 1000 0 0 5 10 15 20 25 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) Gate Charge 15 V GS - Gate-to-Source Voltage (V) ID = 500 mA 12 VDS = 30 V VDS = 48 V 9 r DS(on) - On-Resistance ( W ) (Normalized) 1.5 1.8 On-Resistance vs. Junction Temperature VGS = 10 V @ 500 mA 1.2 VGS = 4.5 V @ 25 mA 0.9 6 0.6 3 0.3 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71411 S-04279--Rev. C, 16-Jul-01 www.vishay.com 11-3 TP0610K Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. Source-Drain Diode Forward Voltage 1000 VGS = 0 V 8 100 TJ = 125_C r DS(on) - On-Resistance ( W ) I S - Source Current (A) 10 On-Resistance vs. Gate-Source Voltage ID = 500 mA 6 4 ID = 200 mA 2 10 TJ = 25_C TJ = -55_C 1 0.00 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage Variance Over Temperature 0.5 0.4 V GS(th) Variance (V) 0.3 2 Power (W) 0.2 0.1 -0.0 1 -0.1 -0.2 -0.3 -50 0.5 ID = 250 mA 3 2.5 Single Pulse Power, Junction-to-Ambient 1.5 TA = 25_C 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Junction Temperature (_C) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 350_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 11-4 Document Number: 71411 S-04279--Rev. C, 16-Jul-01 |
Price & Availability of TP0610K
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |